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2SA1213-G PDF Datasheet

The 2SA1213-G is General Purpose Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 2SA1213-G
General Purpose Transistor

General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features -Small flat package. -Power amplifier and switching -applications. -Low saturation voltage. -High speed switching time. Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -50 V Emitter-Base voltage VE

Comchip
Comchip
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small fla

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CM521213 CM521613 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 SCR/Diode POW-R-BLOK™ Modules 130 Amperes/1200-1600 Volts L - DIA. (2 TYP.) A J A1K2 (4 TYP.) K1 A1K2 P - M8 THD (4 TYP.) A2 C K1 G1 H F B E F B .110 TAB M K D G N

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