No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SA1210 | Epitaxial Planar Silicon Transistor This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its |
Sanyo |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SA1210 |
Part No | Description ( Function) | Manufacturers | |
2SA1200 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 2SA1200 High Voltage Switching Applications · High voltage: VCEO = −150 V · High transition frequency: fT = 120 MHz (typ.) · Small flat package · PC = 1 to 2 W (mounted on ceramic substrate) · Com |
Toshiba Semiconductor |
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2SA1200 | High Voltage Switching Applications SMD Type High Voltage Switching Applications 2SA1200 Transistors Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz(typ.) Small Flat Package Complementary to 2SC2880 Absolute Maximum Ratings Ta = 25 Parameter Collector-Emitter Voltage Collector-Base V |
Kexin |
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2SA1201 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications 2SA1201 Unit: mm • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounte |
Toshiba Semiconductor |
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2SA1201 | SILICON PNP EPITAXIAL TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SA1201 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz(typ.) |
Unisonic Technologies |
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2SA1201 | TRANSISTOR 2SA1 201 TRANSISTOR(PNP) FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector |
Jin Yu Semiconductor |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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