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2SA1210 PDF Datasheet

The 2SA1210 is Epitaxial Planar SilICon Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 2SA1210
Epitaxial Planar Silicon Transistor

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its

Sanyo
Sanyo
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Recommended search results related to 2SA1210

Part No Description ( Function) Manufacturers PDF
2SA1200   SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 2SA1200 High Voltage Switching Applications · High voltage: VCEO = −150 V · High transition frequency: fT = 120 MHz (typ.) · Small flat package · PC = 1 to 2 W (mounted on ceramic substrate) · Com

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SA1200   High Voltage Switching Applications

SMD Type High Voltage Switching Applications 2SA1200 Transistors Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz(typ.) Small Flat Package Complementary to 2SC2880 Absolute Maximum Ratings Ta = 25 Parameter Collector-Emitter Voltage Collector-Base V

Kexin
Kexin
datasheet pdf
2SA1201   Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications 2SA1201 Unit: mm • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounte

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SA1201   SILICON PNP EPITAXIAL TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2SA1201 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. „ FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz(typ.)

Unisonic Technologies
Unisonic Technologies
datasheet pdf
2SA1201   TRANSISTOR

2SA1 201 TRANSISTOR(PNP) FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector

Jin Yu Semiconductor
Jin Yu Semiconductor
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