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Datasheet 2N7002KU Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | 2N7002KU | N Channel MOSFET SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES ESD Protected 2000V.(Human Body Model) High density cell design for low RDS(ON). Voltage controlled small signal switch.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Drain-Source Voltage
Gate-Source Voltage
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KEC |
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2 | 2N7002KU | N-Channel Enhancement Mode MOSFET 2N7002KU
N-Channel Enhancement Mode MOSFET
High Speed Switching Application
Features
ESD rating: 1000V (HBM)
Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V High power and current handling capability Very fast switching RoHS compliant device
Applications
High speed line driv |
AUK |
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1 | 2N7002KU | N-Channel MOSFET Main Product Characteristics
VDSS
60V
RDS(on) 3Ω(max.)
ID 0.3A Features and Benefits
SOT-23
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body |
GOOD-ARK |
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