No | Part number | Description ( Function ) | Manufacturers | |
4 | 2N6788 | POWER MOSFET N-CHANNEL(BVdss=100V/ Rds(on)=0.30ohm/ Id=6.0A) Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.426B HEXFET ® JANTX2N6788 POWER MOSFET JANTXV2N6788 [REF:MIL-PRF-19500/555] [GENERIC:IRFF120] N-CHANNEL Product Summary Part Number JANTX2N6788 JANTXV2N6788 BVDSS 100V RDS(on) 0.30Ω ID 6.0A 100 Volt, 0.30Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power |
International Rectifier |
|
3 | 2N6788 | Trans MOSFET N-CH 100V 6A 3-Pin TO-39 |
New Jersey Semiconductor |
|
2 | 2N6788 | N-CHANNEL MOSFET 2N6788 and 2N6790 Available on commercial versions N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788 and 2N6790 devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Qualified Levels: JAN, JANTX, and JANTXV Im |
Microsemi |
|
1 | 2N6788U | N-CHANNEL MOSFET 2N6788U and 2N6790U Compliant N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788U and 2N6790U devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Qualified Levels: JAN, JANTX, and JANTXV Important: For the la |
Microsemi |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |