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Datasheet 2N6667 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2N6667 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2N6667
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC |
 Inchange Semiconductor |
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| 5 | 2N6667 | DARLINGTON POWER TRANSISTORS(PNP SILICON )
2N6667, 2N6668 Darlington Silicon Power Transistors
Designed for general−purpose amplifier and low speed switching applications.
• High DC Current Gain − • • • • • •
hFE = 3500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus |
 ON Semiconductor |
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| 4 | 2N6667 | POWER TRANSISTORS(65W) A
A
A
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 Mospec Semiconductor |
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| 3 | 2N6667 | PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
 Boca Semiconductor Corporation |
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