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Datasheet 2N6666 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | 2N6666 | Silicon PNP Darlington Power Transistor INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2N6666
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC |
Inchange Semiconductor |
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2 | 2N6666 | POWER TRANSISTORS(65W) A
A
A
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Mospec Semiconductor |
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1 | 2N6666 | PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
Boca Semiconductor Corporation |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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