| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 2N656L | BJT |
 New Jersey Semiconductor |
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0 1 2 3 4 5 6 7 8 9 |
Recommended search results related to 2N656L |
| Part No | Description ( Function) | Manufacturers | |
| 2N656 | BJT |
New Jersey Semiconductor |
|
| 2N6560 | Bipolar NPN Device 2N6560 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675 |
 Seme LAB |
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| 2N6561 | Bipolar NPN Device 2N6561 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675 |
Seme LAB |
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| 2N6562 | NPN Transistor 10 AMP NPN (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) 2N6562 2N6581 2N6590 10 450 10 40 5 10 450 7 35 Note 1 10 450 7 35 Note 1 10 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) 2N4907 2N4908 2N5621 2N5737 2N57 |
 SSDI |
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| 2N6563 | NPN Transistor 10 AMP NPN(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N1904 10 100 20 60 Note 1 1 No |
SSDI |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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