No | Part number | Description ( Function ) | Manufacturers | |
4 | 2N6500 | HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
ETC |
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3 | 2N6500 | Bipolar NPN Device 2N6500 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 110V IC = 4A 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min |
Seme LAB |
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2 | 2N6500 | Silicon Power Transistor SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6500 · DESCRIPTION With TO-66 package ·Wide area of operation ·High sustaining voltage APPLICATIONS ·For high-speed switching and linearamplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolu |
SavantIC |
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1 | 2N6500 | Trans GP BJT PNP 90V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |