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Datasheet 2N6427 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2N6427 | NPN Darlington Transistor |
 National Semiconductor |
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| 5 | 2N6427 | NPN Darlington transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N6427 NPN Darlington transistor
Product specification File under Discrete Semiconductors, SC04 1997 Jul 04
Philips Semiconductors
Product specification
NPN Darlington transistor
FEATURES • High current (max. 500 mA) • Low voltage |
 NXP Semiconductors |
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| 4 | 2N6427 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
 Samsung semiconductor |
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| 3 | 2N6427 | NPN Darlington Transistor 2N6427 / MMBT6427
Discrete POWER & Signal Technologies
2N6427
MMBT6427
C
E C B
TO-92
E
SOT-23
Mark: 1V
B
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteri |
 Fairchild Semiconductor |
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