No | Part number | Description ( Function ) | Manufacturers | |
4 | 2N6303 | Silicon PNP Power Transistors 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • • 2N6303 High-Speed Switching Medium-Current Switching High-Frequency Amplifiers Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min) DC Current Gain: h FE = 30-150 @ IC = 1.5 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 |
Microsemi Corporation |
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3 | 2N6303 | Power Transistor |
Crystaloncs |
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2 | 2N6303 | Bipolar PNP Device 2N6303 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO205AD) PINOUTS 2 – Base 3 – Collector Bipolar PNP Device in a Hermetical |
Seme LAB |
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1 | 2N6303 | Trans GP BJT PNP 80V 3A 3-Pin TO-5 |
New Jersey Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |