Datasheet 2N6301 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2N6301	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6298 2N6299 PNP 2N6300 2N6301 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for hig	Central Semiconductor	transistor
2	2N6301	PNP DARLINGTON POWER SILICON TRANSISTOR TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/539 Devices 2N6300 2N6301 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipatio	Microsemi	transistor
3	2N6301	Silicon NPN Power Transistors SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2N6300 2N6301 DESCRIPTION ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING	Savantic	transistor
4	2N6301	DARLINGTON SILICON POWER TRANSISTORS 2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) DARLINGTON SILICON POWER TRANSISTORS Designed for general purpose amplifier and low frequency switching applications. 24.13 (0.95) 24.63 (0.97) 14.48 (0.57	Seme LAB	transistor
5	2N6301	POWER TRANSISTORS(8A/ 75W) A A A A	Mospec Semiconductor	transistor

2N6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2N60	N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60 2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact	Unisonic Technologies	mosfet
2	2N60-E	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60-E 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.	Unisonic Technologies	mosfet
3	2N6008	Series 2N Transistors	Sprague	transistor
4	2N6009	Series 2N Transistors	Sprague	transistor
5	2N6010	Silicon Transistors	Semiconductor	transistor
6	2N6027	SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte	Central Semiconductor	transistor
7	2N6027	Programmable Unijunction Transistor 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge	ON Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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