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Datasheet 2N6300 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | 2N6300 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 2N6298 2N6299 PNP 2N6300 2N6301 NPN
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for hig |
 Central Semiconductor |
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| 8 | 2N6300 | PNP DARLINGTON POWER SILICON TRANSISTOR TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/539
Devices
2N6300
2N6301
Qualified Level
JANTX JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipatio |
 Microsemi |
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| 7 | 2N6300 | Silicon NPN Power Transistors SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6300 2N6301
DESCRIPTION ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299
APPLICATIONS ·General purpose power amplifier and
low frequency switching applications
PINNING |
 Savantic |
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| 6 | 2N6300 | DARLINGTON SILICON POWER TRANSISTORS 2N6300 2N6301
MECHANICAL DATA Dimensions in mm (inches)
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
DARLINGTON SILICON POWER TRANSISTORS
Designed for general purpose amplifier and low frequency
switching applications.
24.13 (0.95) 24.63 (0.97) 14.48 (0.57 |
 Seme LAB |
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