No | Part number | Description ( Function ) | Manufacturers | |
9 | 2N6282 | POWER TRANSISTORS(20A/160W) A A A A |
Mospec Semiconductor |
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8 | 2N6282 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6282/D Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustaining |
ON Semiconductor |
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7 | 2N6282 | DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
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6 | 2N6282 | (2N6282 - 2N6287) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6282/D Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector |
Motorola Semiconductors |
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5 | 2N6282 | (2N6282 - 2N6284) Silicon NPN Power Transistors SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N6285/6286/6287 ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N6282 2N6283 2N6284 Fig.1 simplified outline (TO-3) and sy |
Savantic |
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4 | 2N6282 | Bipolar NPN Device 2N6282 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 60V 3 (case) |
Seme LAB |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |