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Datasheet 2N6128 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N6128 | NPN Transistor 10 AMP NPN
Sorted by IC, then VCEO
Part Number
mIaCx (A)
2N3018 2N5049 2N2811 2N2812 2N3920 2N5083 2N5084 2N5622 2N5877 2N6387 2N2813 2N2814 2N4301 2N5006 2N5008 2N5085 2N5313 2N5317 2N5327 2N5328 2N5552 2N5624 2N5626 2N5658 2N5659 2N5730 2N5854 2N6128 2N6217 2N6270 2N6388 2N6495 2N7368 SFT5152 S |  SSDI | transistor |
| 2 | 2N6128 | NPN SILICON POWER TRANSISTOR Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
|  New Jersey Semi-Conductor | transistor |
2N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N60 | N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact  Unisonic Technologies mosfet | | |
| 2 | 2N60-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Unisonic Technologies mosfet | | |
| 3 | 2N6008 | Series 2N Transistors Sprague transistor | | |
| 4 | 2N6009 | Series 2N Transistors Sprague transistor | | |
| 5 | 2N6010 | Silicon Transistors Semiconductor transistor | | |
| 6 | 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte  Central Semiconductor transistor | | |
| 7 | 2N6027 | Programmable Unijunction Transistor 2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge  ON Semiconductor transistor | |
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