No | Part number | Description ( Function ) | Manufacturers | |
1 | 2N60LL-TMA-T | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60L 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1 1 Power MOSFET TO-220 The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl |
Unisonic Technologies |
0  1  2  3  4  5  6  7  8 9 |
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02N60P | SSM02N60P SSM02N60P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive-avalanche rated Fast-switching Simple drive requirement G D BV DSS RDS(ON) ID TO-220 600V 8Ω 2A Description S The TO-220 package is widely preferred for commercial and industrial applications. |
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12N60 | N-CHANNEL MOSFET 12N60(F,B,H) 12A mps,600 Volts N-CHANNEL MOSFET FEATURE 12A,600V,RDS(ON)=0.7Ω@VGS=10V/6A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 12N60 ITO-220AB 12N60F TO-263 12N60B TO-262 12N60H Absolute M |
CHONGQING PINGYANG |
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12N60 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·Avalanche Energy Specified ·Fast Switc |
Inchange Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |