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Datasheet 2N6051 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
8 | 2N6051 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base pro |
Central Semiconductor |
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7 | 2N6051 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
isc Product Specification
2N6051
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= -80V(Min) ·Complement to type 2N6058
APPL |
Inchange Semiconductor |
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6 | 2N6051 | POWER TRANSISTORS(12A/150W) A
A
A
A
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Mospec Semiconductor |
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5 | 2N6051 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
Boca Semiconductor Corporation |
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Número de pieza | Descripción | Fabricantes | |
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