No | Part number | Description ( Function ) | Manufacturers | |
6 | 2N6039 | Complementary power Darlington transistors 2N6036 2N6039 Complementary power Darlington transistors Features . ■ Good hFE linearity ■ High fT frequency )■ Monolithic Darlington configuration with t(sintegrated antiparallel collector-emitter diode ducApplications ro■ Linear and switching industrial equipment te PDescription oleThe devices are manufactured in planar stechnology with “base island” layout a |
STMicroelectronics |
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5 | 2N6039 | (2N6034 - 2N6039) Plastic Darlington Complementary Silicon Power Transistors (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features http://onsemi.com • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V 4.0 |
ON Semiconductor |
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4 | 2N6039 | (2N6037 - 2N6039) Silicon Power Transistor SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2N6034/6035/6036 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector Base 2N6037 2N6038 2N603 |
SavantIC |
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3 | 2N6039 | Trans Darlington NPN 80V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
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2 | 2N6039 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 2N6034 2N6035 2N6036 PNP 2N6037 2N6038 2N6039 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARK |
Central Semiconductor |
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1 | 2N6039G | Plastic Darlington Complementary Silicon Power Transistors 2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 i |
ON Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |