No | Part number | Description ( Function ) | Manufacturers | |
5 | 2N5684 | POWER TRANSISTORS(50A/300W) A A A A |
Mospec Semiconductor |
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4 | 2N5684 | (2N5684 / 2N5686) High-Current Complementary Silicon Power Transistors ON Semiconductort PNP High−Current Complementary Silicon Power Transistors . . . designed for use in high−power amplifier and switching circuit applications. 2N5684 NPN 2N5686 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 − 80 VOLTS 300 WATTS • High Current Capability − • • w IC Continuous = 50 Amperes. DC Current Gain − hFE = 15 |
ON Semiconductor |
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3 | 2N5684 | Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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2 | 2N5684 | Silicon PNP Power Transistors INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N5684 DESCRIPTION ·High DC Current Gain-hFE=15~60@IC = -25A ·Low Saturation Voltage- VCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS ·Designed for use in high power amplifer and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collecto |
Inchange Semiconductor |
|
1 | 2N5684 | NPN POWER SILICON TRANSISTOR NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/466 Devices 2N5683 2N5684 TECHNICAL DATA Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N5683 2N5684 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation (1) @ TC = 250C @ TC = 1000C VCEO VCBO VEBO IB IC PT 60 80 60 80 5.0 |
Microsemi |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |