No | Part number | Description ( Function ) | Manufacturers | |
5 | 2N5583 | HIGH FREQUENCY TRANSISTOR 2N5583 JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR PNP SILICON fc MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T/ = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction |
Motorola Semiconductors |
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4 | 2N5583 | PNP Silicon High Frequency Transistor 2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications. PACKAGE STYLE MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC 500 mA -30 V 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 350 °C/W CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE VCE(SAT) |
Advanced Semiconductor |
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3 | 2N5583 | Silicon Epitaxial Planar Bipolar MW NPN Transistor w w w .D t a S a e h U 4 t e m o .c w w w .D at h S a t e e 4U . m o c |
GAE |
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2 | 2N5583 | Bipolar PNP Device 2N5583 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 30V 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 1 – Emitter Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ (VCE / IC) W m o c . * Max |
Semelab PLC |
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1 | 2N5583 | Bipolar Transistor |
New Jersey Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |