No | Part number | Description ( Function ) | Manufacturers | |
1 | 2N5415S | HIGH-VOLTAGE AMPLIFIER 2N5415S HIGH-VOLTAGE AMPLIFIER DESCRIPTION The 2N5415S is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case, intended for high vol-tage switching and linear amplifier applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO I CM Pt o t T st g, T j October 1988 Parameter Collector-base Voltage (I E = 0) Collector-emitt |
STMicroelectronics |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2N5415S |
Part No | Description ( Function) | Manufacturers | |
2N5415 | PNP high-voltage transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21 Philips Semiconductors Product specification PNP high-voltage |
NXP Semiconductors |
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2N5415 | SILICON PNP TRANSISTORS 2N5415 ® 2N5416 SILICON PNP TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated appl |
STMicroelectronics |
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2N5415 | HIGH VOLTAGE AMPLIFIERS |
Boca Semiconductor Corporation |
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2N5415 | PNP Transistor MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ T |
Motorola Semiconductors |
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2N5415 | Silicon PNP Power Transistor INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·PNP high-voltage transistor ·Low current (max. 200 mA) ·High voltage (max. 300 V) isc Product Specification 2N5415 APPLICATIONS ·Designed for Switching and linear amplification in military, industrial and |
Inchange Semiconductor |
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