No | Part number | Description ( Function ) | Manufacturers | |
1 | 2N5311 | Trans GP BJT NPN 80V 20A 3-Pin TO-61 |
New Jersey Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2N5311 |
Part No | Description ( Function) | Manufacturers | |
2N5301 | POWER TRANSISTORS(200W) A A A A |
Mospec Semiconductor |
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2N5301 | POWER TRANSISTORS NPN SILICON MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5301/D High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) |
ON Semiconductor |
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2N5301 | Bipolar NPN Device 2N5301 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675 |
Seme LAB |
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2N5301 | Silicon NPN Power Transistors Inchange Semiconductor Silicon NPN Power Transistors Product Specification 2N5301 2N5302 2N5303 DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switchin |
Inchange Semiconductor |
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2N5301 | NPN SILICON POWER TRANSISTOR |
SSDI |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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