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2N5301 PDF Datasheet

The 2N5301 is High Impedence, Bipolar NPN DevICe. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
8 2N5301
POWER TRANSISTORS(200W)

A A A A

Mospec Semiconductor
Mospec Semiconductor
pdf
7 2N5301
POWER TRANSISTORS NPN SILICON

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5301/D High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301,

ON Semiconductor
ON Semiconductor
pdf
6 2N5301
Bipolar NPN Device

2N5301 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312)

Seme LAB
Seme LAB
pdf
5 2N5301
Silicon NPN Power Transistors

Inchange Semiconductor Silicon NPN Power Transistors Product Specification 2N5301 2N5302 2N5303 DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 DESCRIPTION Base Emitter Collector Fig.1 simplified ou

Inchange Semiconductor
Inchange Semiconductor
pdf
4 2N5301
NPN SILICON POWER TRANSISTOR

SSDI
SSDI
pdf
3 2N5301
Bipolar Transistor

Bipolar Transistor Features: •  High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA •  Low Collector Emitter saturation Voltage VCE(sat) 0.75V @ IC = 10A NPN Collector 3 2 Base 1 Emitter Description: High Power TO-3, NPN, Silicon Transistor Designed for use in power amplifier and switching circuits applications Maximum Ratings: Characteristic Collecto

Multicomp
Multicomp
pdf

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Part Number Function Manufacturers PDF
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Vishay Semiconductor
Vishay
pdf
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On Semiconductor
ON Semiconductor
pdf

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