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Datasheet 2N5247 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2N5247 | HIGH-FREQUENCY AMPLIFIER JFET MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation TA = 25°C
Derate above 25°C (Free Air)
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Lead Temperature (1/16" from Case for 10 Seconds)
Storage Temperature Range
Symbol VDG Vgs
IQ
PD
Pd
t |
 Motorola Semiconductors |
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| 2 | 2N5247 | N-Channel JFET P-Channel Power MOSFET’s
Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS(V) ID(ON)(mA) RDS(ON)( Ω) Part No. Drain-Source Min. On-State Brkdwn. Voltg. DS Current BVDSS (V) I D(ON)(A) Typ. Static DS Resistance RDS(ON) (Ω ) Package Bulk/Reel
Operati |
 Taitron Components |
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| 1 | 2N5247 | Trans JFET N-CH 3-Pin TO-92 Bulk |
 New Jersey Semiconductor |
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