|
|
Datasheet 2N5108 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N5108 | HIGH FREQUENCY TRANSISTOR 2N5108
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Emitter Voltage (Rbe = 10(7) Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a Tq = 25°C Derate above 25°C
Storage Temperature
Symbol vCEO VCER v CBO v EBO
•c
PD
Tstg
Value |  Motorola Semiconductors | transistor |
| 2 | 2N5108 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5108
DESCRIPTION ·High Current-Gain Bandwidth Product
: fT= 1200MHz (Min) @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of hFE
APPLICATIONS ·Designed for general purpose Class C amplifier applica |  INCHANGE | transistor |
| 3 | 2N5108 | NPN SILICON HIGH FREQUENCY TRANSISTOR 2N5108
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz.
PACKAGE STYLE TO-39 FEATURES:
• GPE = 6.0 dB Typ. at 1.0 GHz • FT = 1,500 MHz Typ. at 15 V/ 50 mA • Hermetic TO-39 Package
MAXIMUM RATINGS
IC VC |  Advanced Semiconductor | transistor |
| 4 | 2N5108 | Trans GP BJT NPN 20V 0.4A 3-Pin TO-39 |  New Jersey Semiconductor | data |
2N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N5000 | NPN Silicon Power Transistor Texas transistor | | |
| 2 | 2N5000 | Trans GP BJT NPN 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
| 3 | 2N5001 | PNP Transistor 2 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mhaFEx
@Ic (A)
VmCEa(sxat) (V)
@(A)IC
mfTin (MHz)
mPaTx
*TC=100°C
(W)
Package
2N3205
2
40
20
60 Note 1 0.4
Note 1
Note 1
40
TO-59
2N32  SSDI transistor | | |
| 4 | 2N5001 | Trans GP BJT PNP 80V 2A 3-Pin TO-59 New Jersey Semiconductor data | | |
| 5 | 2N5002 | HIGH SPEED NPN TRANSISTOR SSDI transistor | | |
| 6 | 2N5002 | Type 2N5002 Geometry 9202 Polarity NPN Data Sheet No. 2N5002
Type 2N5002
Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV
Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9202 chip geometry. The Min and Max limits shown  Semicoa Semiconductor data | | |
| 7 | 2N5002 | (2N5002 / 2N5004) NPN POWER SILICON TRANSISTOR TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO IC IC(3) PT T  Microsemi Corporation transistor | |
| Esta página es del resultado de búsqueda del 2N5108. Si pulsa el resultado de búsqueda de 2N5108 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |