No | Part number | Description ( Function ) | Manufacturers | |
3 | 2N5070 | Diode ( Rectifier ) |
American Microsemiconductor |
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2 | 2N5070 | NPN Silicon RF Power Transistor ( DataSheet : ) 2N5070 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5070 is Designed for High Power Linear Amplifier Application in the 2.0 to 75 MHz Range. FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS 3.3 A IC 10 A (PEAK) VCE PDISS TSTG θJC 30 V 70 W @ TC = 25 OC -65 OC to +200 OC 2.5 OC/W PACKAGE STY |
Advanced Semiconductor |
|
1 | 2N5070 | Trans GP BJT NPN 200V 3A 3-Pin TO-59 |
New Jersey Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |