| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 2N4957UB | Type 2N4957UB Geometry 0006 Polarity PNP Data Sheet No. 2N4957UB Type 2N4957UB Geometry 0006 Polarity PNP Qual Level: JAN - JANTXV Features: • • • • Small signal RF silicon transistor designed for high-gain, low-noise applications. Housed in a cersot case. Also available in chip form using the 0006 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/426 which Semicoa meets in all cases. Generic |
 Semicoa Semiconductor |
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Recommended search results related to 2N4957UB |
| Part No | Description ( Function) | Manufacturers | |
| 2N4957 | Chip Type 2C4957 Geometry 0006 Polarity PNP Data Sheet No. 2N4957 Type 2N4957 Geometry 0006 Polarity PNP Qual Level: JAN - JANS Features: • • • • Small signal RF silicon transistor designed for high-gain, low-noise applications. Housed in a TO-72 case. Also available in chip form using the 0006 chip geometry. The |
Semicoa Semiconductor |
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| 2N4957 | HIGH FREQUENCY TRANSISTOR 2N4957 2N4958 2N4959 2N5829 2N4957 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissi |
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| 2N4957 | Trans GP BJT PNP 30V 0.03A 4-Pin TO-72 |
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| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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