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Datasheet 2N4398 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N4398 | PNP Silicon High-Power Transistors ON Semiconductort
PNP Silicon High-Power Transistors
. . . designed for use in power amplifier and switching circuits.
• Low Collector–Emitter Saturation Voltage —
IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,99
= 1.5 Vdc (Max) 2N5745
• DC Current Gain Specified —
= 1.0 to 30 Adc
� | ON Semiconductor | transistor |
2 | 2N4398 | POWER TRANSISTORS(200W) A
A
A
A
| Mospec Semiconductor | transistor |
3 | 2N4398 | PNP SILICON HIGH-POWER TRANSISTORS | Boca Semiconductor Corporation | transistor |
4 | 2N4398 | Medium Power PNP Switching Transistor 2N4398
MECHANICAL DATA Dimensions in mm (inches)
4 0 .0 1 (1 .5 7 5 ) M a x .
MEDIUM POWER PNP SWITCHING TRANSISTOR FOR SWITCHING APPLICATIONS
2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls .
2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 | Semelab Plc | transistor |
5 | 2N4398 | (2N4398 / 2N4399) Silicon PNP Power Transistors Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ¡¤ With TO-3 package ¡¤ Complement to type 2N5301/5302/5303 ¡¤ Low collector saturation voltage ¡¤ Excellent safe operating area APPLICATIONS ¡¤ For use in power amplifier and switching circuits applic | Inchange Semiconductor | transistor |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo Unisonic Technologies mosfet | | |
2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee Texas transistor | | |
3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I Seme LAB data | | |
4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
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