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Datasheet 2N4240 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N4240 | NPN TRANSISTOR MEDIUM POWER HIGH VOLTAGE LAB
MECHANICAL DATA Dimensions in mm
SEME
2N4240
NPN TRANSISTOR MEDIUM POWER HIGH VOLTAGE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
APPLICATIONS
0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500)
24.33 (0.958) 24.43 (0.962)
Designed for switching regu |  Seme LAB | transistor |
| 2 | 2N4240 | 5 Amp/ 500V/ High Voltage NPN Silicon Power Transistors 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813
2N4240
APPLICATIONS:
• • •
Off-Line Inverters Switching Regulators Motor Controls
• • •
Deflection Circuits DC-DC Converters High Voltage Amplifiers
FEATURES:
• • •
High Volt |  Microsemi Corporation | transistor |
| 3 | 2N4240 | POWER TRANSISTORS(35W) A
A
A
A
|  Mospec Semiconductor | transistor |
| 4 | 2N4240 | COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |  Boca Semiconductor Corporation | transistor |
| 5 | 2N4240 | Trans GP BJT NPN 300V 2A 3-Pin(2+Tab) TO-66 |  New Jersey Semiconductor | data |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo  Unisonic Technologies mosfet | | |
| 2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee  Texas transistor | | |
| 3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I Seme LAB data | | |
| 4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
| 5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
| 6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
| 7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
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