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Datasheet 2N4003 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N4003 | PNP Epitaxial Silicon Transistor ST 2N4402 / 2N4403
PNP Epitaxial Silicon Transistor
General purpose transistor
On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Base 3. Collector TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25ഒ) Parameter
Collector Base Voltage Co | SEMTECH | transistor |
2 | 2N4003 | NPN Transistor OEM: Texas Instruments
2N4003
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4003
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4003
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4003
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4003
Datashee | Texas | transistor |
3 | 2N4003K | N-Channel Enhancement Mode Power MOSFET www.DataSheet.co.kr
2N4003K
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
*
* Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. * ESD Protected Gate. * Minimum Breakdown Voltage Rating of 30V.
Features:
* Gate | Weitron Technology | mosfet |
4 | 2N4003NLT1 | Small Signal MOSFET WILLAS
S1.m0AaSlUl RSFiAgCnEaMlOMUNOT SSCFHEOTTTK3Y0VB,A0R.5R6IAER, SRiEnCgTlIeF,ISEROST--2203V- 200V
SOD-123+ PACKAGE
FM120-M+ 2N4003NLTTH1RU
FM1200-M+
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and therm | WILLAS | mosfet |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo Unisonic Technologies mosfet | | |
2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee Texas transistor | | |
3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I Seme LAB data | | |
4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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