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Datasheet 2N3960 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2N3960 | HIGH FREQUENCY TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation (§ TA = 25°C
Derate above 25°C Total Device Dissipation <& Tq = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol vCEO vCBO vEBO
PD
Pd
TJ. Tstg
Va |
 Motorola Semiconductors |
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| 4 | 2N3960 | NPN SILICON SWITCHING TRANSISTOR TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/399
DEVICES
2N3960
2N3960UB
LEVELS
JAN JANTX JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C |
 Microsemi |
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| 3 | 2N3960 | Type 2N3960 Geometry 0003 Polarity NPN Data Sheet No. 2N3960
Type 2N3960
Geometry 0003 Polarity NPN Qual Level: JAN - JANTXV
Features: • • • • General-purpose low-power NPN silicon transistor. Housed in TO-18 case. Also available in chip form using the 0003 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/399 wh |
 Semicoa Semiconductor |
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| 2 | 2N3960 | Trans GP BJT NPN 12V 0.05A 3-Pin TO-18 |
 New Jersey Semiconductor |
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