No | Part number | Description ( Function ) | Manufacturers | |
6 | 2N3767 | NPN POWER SILICON TRANSISTOR TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices 2N3766 2N3767 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2 |
Microsemi Corporation |
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5 | 2N3767 | Bipolar NPN Device in a Hermetically sealed TO66 Metal Package 2N3767 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) Bipolar NPN Device. VCEO = 80V IC = 4A All Semelab hermetically sealed products c |
Seme LAB |
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4 | 2N3767 | SILICON NPN POWER TRANSISTORS 2N3766 2N3767 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Col |
Central Semiconductor |
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3 | 2N3767 | NPN Power Silicon Transistor 2N3766 & 2N3767 NPN Power Silicon Transistor Features Available in JAN, JANTX, JANTXV per MIL-PRF19500/518 TO-66 (TO-213AA) Package Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current |
MA-COM |
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2 | 2N3767 | Trans GP BJT NPN 80V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
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1 | 2N3767 | Silicon NPN Power Transistors INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3767 DESCRIPTION ·Continuous Collector Current IC= 4A ·Collector Power Dissipation- : PC= 20W @TC= 25℃ APPLICATIONS ·Designed for power amplifier and medium speed applications. switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1 |
Inchange Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |