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2N3767 PDF Datasheet

The 2N3767 is NPN Power SilICon Transistor, SilICon NPN Power Transistors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
6 2N3767
NPN POWER SILICON TRANSISTOR

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices 2N3766 2N3767 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2

Microsemi Corporation
Microsemi Corporation
pdf
5 2N3767
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package

2N3767 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) Bipolar NPN Device. VCEO = 80V IC = 4A All Semelab hermetically sealed products c

Seme LAB
Seme LAB
pdf
4 2N3767
SILICON NPN POWER TRANSISTORS

2N3766 2N3767 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon NPN power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Col

Central Semiconductor
Central Semiconductor
pdf
3 2N3767
NPN Power Silicon Transistor

2N3766 & 2N3767 NPN Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF19500/518  TO-66 (TO-213AA) Package Rev. V1 Electrical Characteristics Parameter Test Conditions Symbol Units Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current

MA-COM
MA-COM
pdf
2 2N3767
Trans GP BJT NPN 80V 4A 3-Pin(2+Tab) TO-66

New Jersey Semiconductor
New Jersey Semiconductor
pdf
1 2N3767
Silicon NPN Power Transistors

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3767 DESCRIPTION ·Continuous Collector Current IC= 4A ·Collector Power Dissipation- : PC= 20W @TC= 25℃ APPLICATIONS ·Designed for power amplifier and medium speed applications. switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1

Inchange Semiconductor
Inchange Semiconductor
pdf

[1]    

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