No | Part number | Description ( Function ) | Manufacturers | |
2 | 2N3741R | POWER TRANSISTORS PNP SILICON 2N3741R MECHANICAL DATA Dimensions in mm POWER TRANSISTORS PNP SILICON 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 2 0.71 (0.028) 0.86 (0.034) FEATURES • Hermetically Package. • Low Saturation Voltage • High Gain 4.83 (0.1 |
Seme LAB |
|
1 | 2N3741R | Silicon PNP Power Transistors INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N3741R DESCRIPTION ·DC Current Gain- : hFE= 30-100@IC= -250mA ·Wide Area of Safe Operation ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6 V(Max)@ IC = -1A ·High Gain ·Low Saturation Voltage APPLICATIONS ·Designed for use as drivers, switches and medium-power amplifier and gener |
Inchange Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |