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Datasheet 2N3713 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2N3713 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N3713
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for medium-sp |
 Inchange Semiconductor |
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| 6 | 2N3713 | POWER TRANSISTORS(10A/150W) A
A
A
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 Mospec Semiconductor |
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| 5 | 2N3713 | SILICON NPN POWER TRANSISTORS |
 Boca Semiconductor Corporation |
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| 4 | 2N3713 | Bipolar NPN Device 2N3713
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) ma |
 Seme LAB |
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