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Datasheet 2N3553 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2N3553 | HIGH FREQUENCY TRANSISTOR 2N3553
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol vCEO vCBO v EBO
•c
p D.
TJ< Tstg
Value 40 65 4.0
1. |
 Motorola Semiconductors |
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| 4 | 2N3553 | NPN SILICON HIGH FREQUENCY TRANSISTOR 2N3553
MECHANICAL DATA Dimensions in mm (inches)
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
2.54 (0.100)
45°
TO-39 ( |
 Seme LAB |
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| 3 | 2N3553 | NPN SILICON RF TRANSISTOR 2N3553
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency.
MAXIMUM RATINGS
IC 1.0 A
VCE PDISS TJ TSTG θJC
40 V 7.0 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC
25 OC/W
PACKAGE STYLE TO- 39
1 = EM |
 ASI |
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| 2 | 2N3553 | Silicon planar epitaxial overlay transistor DISCRETE SEMICONDUCTORS
DATA SHEET
2N3553 Silicon planar epitaxial overlay transistor
Product specification Supersedes data of October 1981 File under Discrete Semiconductors, SC08a 1995 Oct 27
Philips Semiconductors
Product specification
Silicon planar epitaxial overlay transistor
APPLICATIO |
 NXP Semiconductors |
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