No | Part number | Description ( Function ) | Manufacturers | |
1 | 2N3535 | Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package 2N3535 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. Bipolar NPNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 5.08 (0.200) typ. IC = 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All |
Seme LAB |
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Recommended search results related to 2N3535 |
Part No | Description ( Function) | Manufacturers | |
2N3500 | Type 2N3500 Geometry 5620 Polarity NPN Data Sheet No. 2N3500 Type 2N3500 Geometry 5620 Polarity NPN Qual Level: JAN - JANTXV Features: • General-purpose silicon transistor for switching and amplifier applications. Housed in TO-39 case. Also available in chip form using the 5620 chip geometry. The Min and Max limits |
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2N3500 | GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
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2N3500 | NPN SILICON PLANAR RF TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION |
CDIL |
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2N3500 | NPN SILICON SWITCHING TRANSISTOR 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES 2N3498 2N3498L 2N3499 2N3499L 2N3500 2N |
Microsemi |
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2N3500 | GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature |
Motorola Semiconductors |
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