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2N3506 PDF Datasheet

The 2N3506 is Switching Transistor, NPN SilICon Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
10 2N3506
NPN SILICON TRANSISTOR

DATA SHEET 2N3506 2N3507 NPN SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3506, 2N3507 types are Silicon NPN Epitaxial Planar Transistors designed for general purpose switching applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL 2N3506 2N3507 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C

Central Semiconductor
Central Semiconductor
pdf
9 2N3506
Silicon NPN Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3506J) • JANTX level (2N3506JX) • JANTXV level (2N3506JV) • JANS level (2N3506JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Please contact

Semicoa Semiconductor
Semicoa Semiconductor
pdf
8 2N3506
SWITCHING TRANSISTOR

Solid State
Solid State
pdf
7 2N3506
Trans GP BJT NPN 40V 3A 3-Pin TO-39

New Jersey Semiconductor
New Jersey Semiconductor
pdf
6 2N3506
NPN MEDIUM POWER SILICON TRANSISTOR

2N3506 thru 2N3507A Available on commercial versions NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-5 and low profile U4 packaging. Microsemi also offers numerous other transistor products

Microsemi
Microsemi
pdf
5 2N3506
SWITCHING TRANSISTOR

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°c Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N3506 2N3S07 VCEO VCBO VEBO ic 40 50 60 80 5.0 3.0 PD 1.0 5.71 Pd 5.0 28.6 TJ- T

Motorola Semiconductors
Motorola Semiconductors
pdf

[1]    [2]    

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Vishay Semiconductor
Vishay
pdf
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On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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