No | Part number | Description ( Function ) | Manufacturers | |
1 | 2N3239 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3239 DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T |
Inchange Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2N3239 |
Part No | Description ( Function) | Manufacturers | |
2N3202 | Bipolar PNP Device in a Hermetically sealed TO39 Metal Package 2N3202 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 40V |
Seme LAB |
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2N3202 | PNP Silicon Power Transistor |
Solitron Devices |
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2N3202 | (2N3xxx) Free Datasheet http://www.0PDF.com |
ETC |
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2N3203 | PNP Transistor 3 - 3.5 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N6303 3 -80 30 150 1.5 -0.75 1.5 60 6 |
SSDI |
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2N3203 | PNP Silicon Power Transistor |
Solitron Devices |
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