No | Part number | Description ( Function ) | Manufacturers | |
1 | 2N2369ADCSM | DUAL HIGH SPEED / MEDIUM POWER / NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE 2N2369ADCSM DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm (inches) FEATURES 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 1.40 ± 0.15 (0.055 ± 0.006) • DUAL SILICON PLANAR EPITAXIAL DUAL NPN TRANSISTOR 4.32 ± 0.13 (0.170 ± 0.005) |
Seme LAB |
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Part No | Description ( Function) | Manufacturers | |
2N2369 | Bipolar NPN Device 2N2369 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bip |
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2N2369 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Appli |
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2N2369 | Switching Transistors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2369/D Switching Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N2369 2N2369A* *Motorola Preferred Device 3 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector |
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2N2369 | NPN switching transistor DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification NPN switching transistor FEATURES • Low cu |
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2N2369 | HIGH-FREQUENCY SATURATED SWITCH 2N2369 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. TO-18 INTERNAL SCHEMATIC D |
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