Datasheet 2N2222AHR Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2N2222AHR	Hi-Rel NPN bipolar transistor 2N2222AHR Hi-Rel 40 V - 0.8 A NPN transistor Datasheet — production data Features Parameter BVCEO min IC (max) hFE at 10 V - 150 mA ■ ■ ■ ■ ■ ESCC 40 V 0.8 A 100 JANS 50 V 3 1 2 3 TO-18 3 4 1 2 1 2 Linear gain characteristics Hermetic packages ESCC and JANS qualified European pref	STMicroelectronics

2N2222 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2N2222	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current- IC= 0.8A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Complement to Type 2N2907 APPLICATIONS ·Designed for general-purpose switching and linear amplification. ABSOLUTE MA	Inchange Semiconductor
2N2222A	NPN SILICON TRANSISTOR 2N2221A 2N2222A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-1	Central
2N2222	NPN switching transistors DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors Product speciﬁcation Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29 Philips Semiconductors Product speciﬁcation NPN switching transistors FEATURES	Philips

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Número de pieza	Descripción	Fabricantes	PDF
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