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Datasheet 2M218 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2M218 | 2M218 SERIES FRANK ELECTRONIC & PLASTIC CO.,LTD.
2M218 SERIES
1. ELECTRICAL CHARCTERISTICS
Peak anode voltage (ebm) Average anode current (Ib) Average output power (Po) Frequency (fo) Filament voltage(Ef) Weight Typical oven power by IEC method
4.0kV 300mAdc 900W 2458MHz 3.3V 760g 600~800W
2. VARIATION OF MOU |  FRANK ELECTRONIC | data |
| 2 | 2M218 | Magnetron GYtYX_N
GGGGGGGGGGGlslj{ypjhsGGGzwljpmpjh{pvu
GGG{GGGGGlphqGlkTX\WXG{GtGGjG~Gt
khl~vvGGjvu{pu|v|zGG~h}lGthnul{yvuGYtYX_N
Gklzjypw{pvu
GGGtGOm |  DAEWOO | data |
2M2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2M200Z | Glass Passivated Junction Silicon Zener Diodes 2M6.8Z - 2M200Z
Taiwan Semiconductor
CREAT BY ART
2W, 6.8V - 200V Glass Passivated Junction Silicon Zener Diodes
FEATURES
- Glass passivated chip junction - Typical IR less than 1μA - Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2  Taiwan Semiconductor diode | | |
| 2 | 2M20Z | Glass Passivated Junction Silicon Zener Diodes 2M6.8Z - 2M200Z
Taiwan Semiconductor
CREAT BY ART
2W, 6.8V - 200V Glass Passivated Junction Silicon Zener Diodes
FEATURES
- Glass passivated chip junction - Typical IR less than 1μA - Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2 Taiwan Semiconductor diode | | |
| 3 | 2M214-21GKH | Continuous Wave Magnetron LG
FOR MESSRS : Uniservice Co Ltd
CUSTOMER’ S ACCEPTANCE SPECIFICATIONS
MAGNETRON : 2M214 – 21GKH
CONTENTS
DATE : FEB. 01, 2008
COVER ------------------------------------------------------------------- 1 APPROVAL CONTENTS ------------------------------------------- 2 TEST SPECIFICATIONS ----  LG data | | |
| 4 | 2M218 | 2M218 SERIES FRANK ELECTRONIC & PLASTIC CO.,LTD.
2M218 SERIES
1. ELECTRICAL CHARCTERISTICS
Peak anode voltage (ebm) Average anode current (Ib) Average output power (Po) Frequency (fo) Filament voltage(Ef) Weight Typical oven power by IEC method
4.0kV 300mAdc 900W 2458MHz 3.3V 760g 600~800W
2. VARIATION OF MOU FRANK ELECTRONIC data | | |
| 5 | 2M218 | Magnetron GYtYX_N
GGGGGGGGGGGlslj{ypjhsGGGzwljpmpjh{pvu
GGG{GGGGGlphqGlkTX\WXG{GtGGjG~Gt
khl~vvGGjvu{pu|v|zGG~h}lGthnul{yvuGYtYX_N
Gklzjypw{pvu
GGGtGOm DAEWOO data | | |
| 6 | 2M219 | 2M219 Series FRANK ELECTRONIC & PLASTIC CO.,LTD.
2M219 SERIES
1. ELECTRICAL CHARCTERISTICS
Peak anode voltage (ebm) Average anode current (Ib) Average output power (Po) Frequency (fo) Filament voltage(Ef) Weight Typical oven power by IEC method
4.2kV 300mAdc 945W 2458MHz 3.3V 810g 700~900W
2. VARIATION OF MO FRANK ELECTRONIC data | | |
| 7 | 2M219 | 2M219 Series 2M219 Series
1. Specifications
Voltage (ebm) Current (Ib) Maixmum Output (Po) Frequency (fo) Filament (Ef) Weight Applicable for MWO
4.2kV 300mAdc 945W 2458MHz 3.3V 810g 700～900W
2. Instruction of installing board
920
110 95 80
930
114.3 95 80
940
80 35
6- 4.5
4- 6 130
4- 4.5 4- 6
3. Ins  ETC data | |
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