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Datasheet 2DB1132P Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12DB1132P32V PNP POWER SWITCHING TRANSISTOR

2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Type: 2DD1664  Ideally Suited for Automated Assembly Processes  Ideal for Medium Power Switching or Amplification Applications  Totally L
Diodes
Diodes		transistor


2DB Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12DB1119SPNP SURFACE MOUNT TRANSISTOR

2DB1119S PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechan
Diodes
Diodes		transistor
22DB1132P32V PNP POWER SWITCHING TRANSISTOR

2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Type: 2DD1664  Ideally Suited for Automated Assembly Processes  Ideal for Medium Power Switching or Amplification Applications  Totally L
Diodes
Diodes		transistor
32DB1132Q32V PNP POWER SWITCHING TRANSISTOR

2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Type: 2DD1664  Ideally Suited for Automated Assembly Processes  Ideal for Medium Power Switching or Amplification Applications  Totally L
Diodes
Diodes		transistor
42DB1132R32V PNP POWER SWITCHING TRANSISTOR

2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Type: 2DD1664  Ideally Suited for Automated Assembly Processes  Ideal for Medium Power Switching or Amplification Applications  Totally L
Diodes
Diodes		transistor
52DB1182Q32V PNP MEDIUM POWER TRANSISTOR

Features  BVCEO > -32V  IC = -2A High Continuous Collector Current  ICM = -3A Peak Pulse Current  Epitaxial Planar Die Construction  Low Collector-Emitter Saturation Voltage  Ideal for Medium Power Switching or Amplification Applications  Totally Lead-Free & Fully RoHS Compliant
Diodes
Diodes		transistor
62DB1184Q50V PNP MEDIUM POWER TRANSISTOR

Features • BVCEO > -50V • IC = -3A High Continuous Collector Current • ICM = -4.5A Peak Pulse Current • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Medium Power Switching or Amplification Applications • Totally Lead-Free & Fully RoHS Complia
Diodes
Diodes		transistor
72DB1188P32V PNP MEDIUM POWER TRANSISTOR

Features  BVCEO > -32V  IC = -2A high Continuous Current  Low saturation voltage VCE(sat) < 800mV @ 2A  Complementary NPN Type: 2DD1766  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standard
Diodes
Diodes		transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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