No | Part number | Description ( Function ) | Manufacturers | |
1 | 29F160BB | Boot Block Single Supply Flash Memory M29F160BT M29F160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS TIME: 55ns PROGRAMMING TIME – 8µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks s ACCESS s s s PROGRAM/ERAS |
STMicroelectronics |
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Recommended search results related to 29F160BB |
Part No | Description ( Function) | Manufacturers | |
29F160BE | 16M (2M X 8/1M X 16) BIT FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29F160TE/BE-55/-70/-90 s GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bit |
Fujitsu Media Devices |
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29F160BT | Boot Block Single Supply Flash Memory M29F160BT M29F160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS TIME: 55ns PROGRAMMING TIME – 8µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top or Bot |
STMicroelectronics |
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29F160D | Boot Sector Flash Memory Am29F160D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will |
AMD |
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29F160E | Boot Sector Flash Memory E ES S II Excel Semiconductor inc. ES29LV400E 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Single power supply operation - 2.7V -3.6V for read, program and erase operations • Minimum 100,000 program/erase cyc |
Excel Semiconductor |
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29F160TE | 16M (2M X 8/1M X 16) BIT FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29F160TE/BE-55/-70/-90 s GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits |
Fujitsu Media Devices |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |