No | Part number | Description ( Function ) | Manufacturers | |
1 | 28N50H | N-CHANNEL MOSFET KIA 28A,500V N-CHANNEL MOSFET SEMICONDUCTORS 15507595280 QQ 2880195519 1.Description 28N50H This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These |
KIA |
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Recommended search results related to 28N50H |
Part No | Description ( Function) | Manufacturers | |
28N50F | FDA28N50F FDA28N50F N-Channel MOSFET January 2012 FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A • Low Gate Charge ( Typ. 80nC) • Low Crss ( Typ. 38pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capabilit |
Fairchild Semiconductor |
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FDA28N50 | N-Channel MOSFET FDA28N50 N-Channel MOSFET August 2008 FDA28N50 N-Channel MOSFET 500V, 28A, 0.155Ω Features • RDS(on) = 0.122Ω ( Typ.)@ VGS = 10V, ID = 14A • Low gate charge ( Typ. 80nC) • Low Crss ( Typ. 42pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability |
Fairchild Semiconductor |
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FDA28N50F | N-Channel MOSFET FDA28N50F N-Channel MOSFET January 2012 FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A • Low Gate Charge ( Typ. 80nC) • Low Crss ( Typ. 38pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capabilit |
Fairchild Semiconductor |
|
FMH28N50E | N-CHANNEL SILICON POWER MOSFET datasheet39.com FMH28N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0 |
Fuji Electric |
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FMH28N50ES | N-CHANNEL SILICON POWER MOSFET datasheet39.com FMH28N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4. |
Fuji Electric |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |