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28N50H PDF Datasheet

The 28N50H is N-channel MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 28N50H
N-CHANNEL MOSFET

KIA 28A,500V N-CHANNEL MOSFET SEMICONDUCTORS 15507595280 QQ 2880195519 1.Description 28N50H This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These

KIA
KIA
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Recommended search results related to 28N50H

Part No Description ( Function) Manufacturers PDF
28N50F   FDA28N50F

FDA28N50F N-Channel MOSFET January 2012 FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A • Low Gate Charge ( Typ. 80nC) • Low Crss ( Typ. 38pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capabilit

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf
FDA28N50   N-Channel MOSFET

FDA28N50 N-Channel MOSFET August 2008 FDA28N50 N-Channel MOSFET 500V, 28A, 0.155Ω Features • RDS(on) = 0.122Ω ( Typ.)@ VGS = 10V, ID = 14A • Low gate charge ( Typ. 80nC) • Low Crss ( Typ. 42pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf
FDA28N50F   N-Channel MOSFET

FDA28N50F N-Channel MOSFET January 2012 FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A • Low Gate Charge ( Typ. 80nC) • Low Crss ( Typ. 38pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capabilit

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf
FMH28N50E   N-CHANNEL SILICON POWER MOSFET

datasheet39.com FMH28N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0

Fuji Electric
Fuji Electric
datasheet pdf
FMH28N50ES   N-CHANNEL SILICON POWER MOSFET

datasheet39.com FMH28N50ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.

Fuji Electric
Fuji Electric
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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