No | Part number | Description ( Function ) | Manufacturers | |
1 | 28F512 | 512K(64Kx8)CMOS FLASH MEMORY |
Intel |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 28F512 |
Part No | Description ( Function) | Manufacturers | |
AM28F512 | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL Am28F512 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention |
Advanced Micro Devices |
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AM28F512-120EC | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL Am28F512 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention |
Advanced Micro Devices |
|
AM28F512-120ECB | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL Am28F512 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention |
Advanced Micro Devices |
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AM28F512-120EE | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL Am28F512 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention |
Advanced Micro Devices |
|
AM28F512-120EEB | 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL Am28F512 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention |
Advanced Micro Devices |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |