No | Part number | Description ( Function ) | Manufacturers | |
1 | 28F001BX-T | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block 100 000 Erase Program Cycles Per Block Simplified Program and Erase Automated Algorithms via On-Chip Write State Machine (WSM) SRAM-Compatible Write Interface Deep Power-Down |
Intel |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 28F001BX-T |
Part No | Description ( Function) | Manufacturers | |
CAT28F001 | 1 Megabit CMOS Boot Block Flash Memory CAT28F001 1 Megabit CMOS Boot Block Flash Memory FEATURES s Fast Read Access Time: 70/90/120/150 ns s On-Chip Address and Data Latches s Blocked Architecture Licensed Intel second source s Deep Powerdown Mode s s s s s — One 8 KB Boot Block w/ Lock Out • Top or Bottom Loc |
Catalyst Semiconductor |
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CAT28F001 | 1 Megabit CMOS Boot Block Flash Memory 1 Megabit CMOS Boot Block Flash Memory CAT28F001 Licensed Intel second source FEATURES s Fast Read Access Time: 90/120 ns s On-Chip Address and Data Latches s Blocked Architecture — One 8 KB Boot Block w/ Lock Out • Top or Bottom Locations — Two 4 KB Parameter Blocks � |
ON Semiconductor |
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E28F001BX-B120 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block 100 000 Erase Program Cycles Per Block Simplified Program and Erase Automa |
Intel Corporation |
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E28F001BX-B150 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block 100 000 Erase Program Cycles Per Block Simplified Program and Erase Automa |
Intel Corporation |
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E28F001BX-B70 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block 100 000 Erase Program Cycles Per Block Simplified Program and Erase Automa |
Intel Corporation |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |