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20N65 PDF Datasheet

The 20N65 is N-channel Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 20N65
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 20N65 Preliminary Power MOSFET 20A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 TO-247 The UTC 20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performa

Unisonic Technologies
Unisonic Technologies
pdf

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Recommended search results related to 20N65

Part No Description ( Function) Manufacturers PDF
CS20N65FA9H   Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS20N65F A9H ○R General Description: CS20N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 20 85 0.37

Huajing Microelectronics
Huajing Microelectronics
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DCR820N65   Phase Control Thyristor

DCR820N65 Phase Control Thyristor DS5923-4 August 2014(LN 31845) FEATURES  Double Side Cooling  High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 6500V 820A 12000A 1500V/µs 200A/µs APPLICATIONS  Medium Voltage Soft Starts  High Voltage Power S

DYNEX
DYNEX
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ICE20N65   N-Channel Enhancement Mode MOSFET

Preliminary Data Sheet ICE20N65 ICE20N65 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance perform

Icemos
Icemos
datasheet pdf
ICE20N65   N-Channel Enhancement Mode MOSFET

ICE20N65 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance

Micross Components
Micross Components
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ICE20N65FP   N-Channel Enhancement Mode MOSFET

Preliminary Data Sheet ICE20N65FP ICE20N65FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance per

Icemos
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[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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