No | Part number | Description ( Function ) | Manufacturers | |
1 | 20N65 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 20N65 Preliminary Power MOSFET 20A, 650V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-247 The UTC 20N65 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performa |
Unisonic Technologies |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 20N65 |
Part No | Description ( Function) | Manufacturers | |
CS20N65FA9H | Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS20N65F A9H ○R General Description: CS20N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 20 85 0.37 |
Huajing Microelectronics |
|
DCR820N65 | Phase Control Thyristor DCR820N65 Phase Control Thyristor DS5923-4 August 2014(LN 31845) FEATURES Double Side Cooling High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 6500V 820A 12000A 1500V/µs 200A/µs APPLICATIONS Medium Voltage Soft Starts High Voltage Power S |
DYNEX |
|
ICE20N65 | N-Channel Enhancement Mode MOSFET Preliminary Data Sheet ICE20N65 ICE20N65 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance perform |
Icemos |
|
ICE20N65 | N-Channel Enhancement Mode MOSFET ICE20N65 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance |
Micross Components |
|
ICE20N65FP | N-Channel Enhancement Mode MOSFET Preliminary Data Sheet ICE20N65FP ICE20N65FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance per |
Icemos |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |