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20N60S5 PDF Datasheet

The 20N60S5 is Spp20n60s5. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 20N60S5
SPP20N60S5

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP20N60S5 VDS RDS(on) ID 600 0.19 20 V Ω A PG-TO220 2 P-TO220-3-1 123 Type SPP20N60S5 Package PG-TO220

Infineon Technologies
Infineon Technologies
pdf

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Recommended search results related to 20N60S5

Part No Description ( Function) Manufacturers PDF
SPB20N60S5   Cool MOS Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPB20N60S5 VDS RDS(on) ID 600 0.19 20 V Ω A

Infineon Technologies
Infineon Technologies
datasheet pdf
SPP20N60S5   Cool MOS Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP20N60S5 V

Infineon Technologies
Infineon Technologies
datasheet pdf
SPW20N60S5   Cool MOS Power Transistor

SPW20N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID 600 0.19 20 P-TO247 V

Infineon Technologies
Infineon Technologies
datasheet pdf
20N60   600V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allow

Unisonic Technologies
Unisonic Technologies
datasheet pdf
20N60A4D   HGTG20N60A4D

HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a M

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf

[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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