No | Part number | Description ( Function ) | Manufacturers | |
1 | 20MT120UF | UltraFastNPTIGBT 5/ I27124 rev. D 02/03 20MT120UF "FULL-BRIDGE" IGBT MTP Features Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery • Low Diode VF • Square RBSOA • Aluminum Nitride DBC • Very Low Stray Inductance Design for High Speed Operation • UL approved (File E78996) • U |
InternationalRectifier |
0  1  2  3  4  5  6  7  8 9 |
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VS-20MT120UFAPbF | IGBT MTP www.vishay.com VS-20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A MTP PRODUCT SUMMARY VCES IC at TC = 96 °C VCE(on) (typical) at IC = 20 A, 25 °C Package Circuit 1200 V 20 A 3.29 V MTP Full bridge FEATURES • Ultrafast Non Punch Thro |
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VS-20MT120UFP | IGBT MTP www.vishay.com VS-20MT120UFP Vishay Semiconductors "Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 A MTP PRODUCT SUMMARY VCES IC at TC = 25 °C VCE(on) Package Circuit 1200 V 40 A 3.29 V MTP Full bridge FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive |
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C2D20120 | Silicon Carbide Schottky Diode C2D20120–Silicon Carbide Schottky Diode Zero Recovery® Rectifier Features • • • • • • • VRRM = 1200 V IF = 20 A Qc =122 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Tempe |
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