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Datasheet 1SS360 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 1SS360 | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) TOSHIBA Diode Silicon Epitaxial Planar Type
1SS360
Ultra High Speed Switching Application
1SS360
Unit: mm
z Small package
z Low forward voltage
: VF = 0.92V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 2.2pF (typ.)
Absolute Maximum Ratings (Ta = 25 |
 Toshiba Semiconductor |
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| 1 | 1SS360F | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) TOSHIBA Diode Silicon Epitaxial Planar Type
1SS360F
Ultra High Speed Switching Applications
1SS360F
Unit in mm
l Small package
: 1608 Flat lead
l Excellent in forward current and forward voltage
characteristics
: VF (3) = 0.92V (typ.)
l Fast reverse recovery time : trr = 1.6ns (typ.)
l Small |
Toshiba Semiconductor |
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