No | Part number | Description ( Function ) | Manufacturers | |
9 | 1SS193 | SILICON EPITAXIAL PLANAR DIODE TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Ultra High Speed Switching Application 1SS193 Unit: mm Small package : SC-59 Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) r |
Toshiba Semiconductor |
|
8 | 1SS193 | SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS193 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: F3 F3 F3 SOT-23 1 3 2 Solid dot = Green molding compound device,if none,the normal device. Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Cont |
JCET |
|
7 | 1SS193 | DIODE RoHS 1SS193 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 1. 2.4 1.3 SOT-23 3 2 ONIC CMarking:F3 2.9 1.9 0.95 0.95 0.4 Unit:mm TRELECTRICAL CHARACTERISTICS o C(Ta=25 C unless oth |
WEJ |
|
6 | 1SS193 | Surface Mount Switching Diodes Surface Mount Switching Diodes P b Lead(Pb)-Free Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications Mechanical Data: * Case: SOT-23, Molded Plastic * Terminals: Solderable per MIL-STD-202, Method 208 * Polarity: See diagram * Weight: 0.008 grams SOT-23 Outline Dimensions |
WEITRON |
|
5 | 1SS193 | Switching Diodes 1. ANODE 2. N.C. 3. CATHODE Features Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: F3 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Power Dissipation Junction temperature Storage temperature range Symbol VRM VR IFM |
LGE |
|
4 | 1SS193 | SWITCHING DIODE RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS193 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed |
RECTRON |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |